18 research outputs found

    A Poly-Si-Based Vertical Comb-Drive Two-Axis Gimbaled Scanner for Optical Applications

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    Abstract-This work presents a novel two-axis gimbaled mirror for optical scanning applications. This scanner has been implemented using the molded surface-micromachining and bulk etching releas

    Micromachined rubber O-ring micro-fluidic couplers

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    In this paper, we present a novel type of a "quick-connect" for micro-fluidic devices realized by a simple silicone-rubber O-ring MEMS coupler. As shown in this work, the proposed O-ring couplers are easy to fabricate and utilize, reusable, can withstand high pressure (>60 psi), and provide good seals. In the paper, results from both the leak rate test and pull-out test are presented, demonstrating the functionality of the O-ring couplers

    Implementation of the CMOS MEMS Condenser Microphone with Corrugated Metal Diaphragm and Silicon Back-Plate

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    This study reports a CMOS-MEMS condenser microphone implemented using the standard thin film stacking of 0.35 ÎŒm UMC CMOS 3.3/5.0 V logic process, and followed by post-CMOS micromachining steps without introducing any special materials. The corrugated diaphragm for the microphone is designed and implemented using the metal layer to reduce the influence of thin film residual stresses. Moreover, a silicon substrate is employed to increase the stiffness of the back-plate. Measurements show the sensitivity of microphone is −42 ± 3 dBV/Pa at 1 kHz (the reference sound-level is 94 dB) under 6 V pumping voltage, the frequency response is 100 Hz–10 kHz, and the S/N ratio >55 dB. It also has low power consumption of less than 200 ÎŒA, and low distortion of less than 1% (referred to 100 dB)

    Inductive Micro Tri-Axial Tactile Sensor Using a CMOS Chip With a Coil Array

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    Integrated Tracking and Focusing Systems of MEMS Optical Pickup Head

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    Design and Fabrication of MOS Type Gas Sensor with Vertically Integrated Heater Using CMOS-MEMS Technology

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    This study implements the metal-oxide-semiconductor (MOS) type gas sensor using the TSMC 0.35 ÎŒm 2P4M process. The gas concentration is detected based on the resistance change measured by the proposed sensor. This design has three merits: (1) low-cost post-CMOS process using metal/oxide wet etching, (2) composite sensing material based on ZnO-SnO2 coating on the CMOS-MEMS structure, (3) vertical integration of heater and ZnO-SnO2 gas-sensing films using CMOS-MEMS and drop casting technologies. Proposed design significantly increase the sensitivity at the high operating temperature. In summary, the sensitivity of presented sensor increased from 0.04%/% (O2/N2) at near room operating temperature to 0.2%/%(O2/N2) at near 140 °C for the range of 5–50% oxygen concentration
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